“GaAs will remain the mainstream solution for cellular handsets, which will be reflected in the continued demand for epitaxial substrates,” predicts Stephen Entwistle, Vice President, Strategic Technologies. And the latest Strategy Analytics study forecasts demand for HBT and pHEMT (pseudomorphic High-Electron Mobility Transistor) devices as continuing steady growth for semi-insulating GaAs epitaxial substrates. In their study, “SI GaAs Epitaxial Substrates Markets 2006-2011,” the company forecasts a compound annual growth rate of (CAAGR) 8 percent through 2011, with North America continuing to be the largest market. With the variety of features becoming more and more evident with cell sets, expect die size reductions and ever increasing integration capabilities with GaAs processes. According to Mr. Entwistle, “Revenue growth will remain strong as increasing raw material costs keep wafer price erosion at a minimum.”
[Editor’s Note: GaAs is Gallium Arsenide, a compound semiconductor material in which active devices are fabricated and capable of producing higher speed devices, such as are required for cell handsets.]
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